Helping the industrialization of LED chip technology, Sanan Optoelectronics won the first prize of National Science and Technology Progress
On the morning of January 10, the Central Committee of the Communist Party of China and the State Council solemnly held the National Science and Technology Awards Conference in Beijing. San'an Optoelectronics Co., Ltd. won the first prize of the National Science and Technology Progress Award with the "Key Technology and Industrialization of High-Efficiency Long-Life Semiconductor Lighting" project in collaboration with the Chinese Academy of Sciences.
This time, Sanan Optoelectronics and the Institute of Semiconductors of the Chinese Academy of Sciences carried out close cooperation by jointly undertaking national scientific research tasks and signing technical cooperation agreements. The project faces the core technical problems of semiconductor lighting products such as photoelectric conversion efficiency and long-term reliability. Material, chip, package, module and application full chain to carry out joint technology research and production, forming a complete set of high-efficiency and long-life semiconductor lighting with independent intellectual property rights, to achieve the domestic industrial chip companies industrialization of chip technology and core device localization . Semiconductor lighting has become one of China's high-tech fields with international competitiveness, and the results of this project are of great significance for practicing the innovation-driven development strategy and promoting industrial transformation and upgrading.
A person in charge of the Semiconductor Research Institute of the Chinese Academy of Sciences said that before that, semiconductor lighting products faced core problems such as low electro-optical conversion efficiency, poor long-term reliability, and lack of standards, and key technologies were monopolized by foreign countries. This project, under the continuous support of the national science and technology plan, lasted for more than ten years in joint technological innovation, and promoted the autonomous and controllable localization of China's semiconductor lighting strategic emerging industry full chain technology. The project results have been applied in various scenarios such as the Great Hall of the People, the 2014 China APEC Summit, the Beijing Olympics, the "ten cities and ten thousand" energy-saving transformation, the Sochi Winter Olympics, and the Russian World Cup, etc., and the large-scale promotion of semiconductor lighting products for the national economy Contribute to sustainable development.
Cai Wenbi, deputy general manager of Sanan Optoelectronics, said that the new generation semiconductor lighting light source with nitride-based light-emitting diodes (LEDs) as the core device has the characteristics of high efficiency, energy saving and environmental protection, and is one of the most promising high-tech industries in the world. With the further implementation of the plan to phase out incandescent lamps in various countries, the LED general lighting market will show explosive growth. The results of this project include p-type nitride doping and quantum well structure design, micro-nano patterned substrates and nucleation technology, high-quality nitride epitaxy technology for new buffer layers, laser-induced light extraction technology, and many other epitaxial chip technologies. Be the first to promote and mass-produce in Sanan Optoelectronics, promote the technological development of Sanan Optoelectronics as a world-renowned epitaxial chip factory, and realize the development of China's semiconductor lighting chips from full dependence on imports to independent and controllable full domestication, and export of LED chips and application products To many countries in Europe and the United States, it has realized the independent development of semiconductor lighting chips to replace imports, and promoted the large-scale promotion and application of semiconductor lighting terminal products.
Cai Wenbi said that in order to consolidate Sanan Optoelectronics' leading position in traditional semiconductor lighting and adapt to the diversified development of semiconductor lighting applications, Sanan Optoelectronics also continues to cooperate with scientific research institutions such as the Chinese Academy of Sciences to accelerate expansion into high-end and emerging semiconductor lighting fields. At present, the construction of the semiconductor project invested by Sanan Optoelectronics in the Nan'an Park of “Quanzhou Xingu” and the industrialization project of Mini / Micro LED display chips in Gedian Economic and Technological Development Zone in Ezhou, Hubei Province is progressing smoothly; the Sanan project invests in high-end nitride Gallium LED epitaxial chip, high-end GaAs LED epitaxial chip, Mini / Micro LED chip, automotive LED lighting and other fields. The company has made a new journey to "rebuild a San'an".
It is reported that Sanan Optoelectronics has an internationally renowned and domestic leading full-color ultra-high-brightness light-emitting diode epitaxy and chip industrialization production base. It is also a research and development and industrialization base for microwave RF, power electronics, and 6-inch compound integrated circuit chips in China. Has nearly 2,000 patents and proprietary technologies, and has a national post-doctoral research station and a national enterprise technology center. It has undertaken a number of national key research projects. It is a national high-tech industrialization demonstration project approved by the National Development and Reform Commission. "Semiconductor Lighting Engineering Leading Enterprise" identified by the Ministry of Science and Technology, "National Technology Innovation Demonstration Enterprise" identified by the Ministry of Industry and Information Technology, and "National Intellectual Property Demonstration Enterprise" identified by the State Intellectual Property Office.
Chief Editor: Zhao Chen